SSTD89A Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel JFET with Built-In Self-Biased Diodes

SSTD89A
Vishay Siliconix
New Product
SPECIFICATIONS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Source Breakdown Voltage
Gate-Source Cut-Off Voltage
Saturation Current
Operating Current
Gate-Reverse Current
Drain Cut-Off Current^b
Diode Forward Transconductance
Gate-Source Forward Voltage
Dynamic
V_(BR)GSS
V_GS(off)
I_DSS
I_D(op)
I_GSS
I_D(off)
V_F
V_GS(F)
V_GS = 0 V, I_G = 1 mA
V_DS = 10 V, I_D = 100 nA
V_DS = 10 V, V_GS = 0 V
See Figure 1
V_GS = 10 V, V_DS = 0 V
V_DS = 15 V, V_GS = –5 V
I_F = 1 mA
V_DS = 0 V, I_G = 1 mA
Common-Source Forward
Transconductance
gfs
Common-Source Input Capacitance
C_iss
Common-Source
Reverse Transfer Capacitance
C_rss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Equivalent Input Noise Voltage
e_n
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Min Typ^a Max Unit
–15
–21
V
–0.3
–1.2
1.1
mA
10
50
mA
5
100
pA
2
0.5
0.7
V
0.7
0.7
1.5
3.8
2.1
5
mS
pF
NV/s
qrt (Hz)
OPERATING CURRENT TEST CIRCUIT
SSTD89A
D
1.2 V
G
Internal
Diode
V_GS(op)
S
22 kW
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2
Figure 1.
Document Number: 71092
S-02336—Rev. B, 23-Oct-00