SSTD89A Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel JFET with Built-In Self-Biased Diodes

New Product
SSTD89A
Vishay Siliconix
N-Channel JFET with Built-In Self-Biased Diodes
PRODUCT SUMMARY
V_GS(off) (V)
V_(BR)DSS Min (V)
–0.3 to –1.2
–15
g_{fs Min (mS)}
1
I_DSS Max (mA)
1.1
FEATURES
D High Gain
D Built-In Diodes
D V_GS(off) Max –1.2 V
BENEFITS
D Full Performance from Low Voltage
D Power Supply: As Low As 1.2 V
D Low Signal Loss/System Error
D High Quality, Low Level Signal
Amplification
APPLICATIONS
D Hearing Aids, Mini Microphones
D High-Gain/Low-Noise Amplifiers
D Low-Current/Low-Voltage Battery Powered Amplifiers
D Infrared Detector Amplifiers
D Ultra-High Input Impedance Pre-Amplifiers
DESCRIPTION
The SSTD89A n-channel JFET features built-in self-biased
diodes and is designed to provide low voltage, low noise
and low cut-off voltage. It can be used with power supplies
as low as 1.2 V. The SSTD89A is ideal for use in low
current amplifier, hearing aid and mini-microphone
applications.
The SSTD89A is available in the SC-70 (SOT-353), 5-lead
package.
SOT-353
SC-70 (5-LEADS)
Diode 1
5S
2
G3
4D
Top View
Order Number: SSTD89A
ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V)
Gate-Drain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –15 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –15 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation^a
SOT-353 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes
a. Device mounted with all leads soldered or welded to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71092
S-02336—Rev. B, 23-Oct-00
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