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SQJ940EP_15 Datasheet, PDF (2/15 Pages) Vishay Siliconix – Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
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SQJ940EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = 250 μA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea RDS(on)
Forward Transconductanceb
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
VGS = 0 V
VDS 40 V
VGS = 0 V
VDS = - 40 V
VGS = 0 V VDS = 40 V, TJ = 125 °C
VGS = 0 V VDS = 40 V, TJ = 125 °C
VGS = 0 V VDS = 40 V, TJ = 175 °C
VGS = 0 V VDS = 40 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 15 A
VGS = 10 V
ID = 20 A
VGS = 10 V
ID = 15 A, TJ = 125 °C
VGS = 10 V
ID = 20 A, TJ = 125 °C
VGS = 10 V
ID = 15 A, TJ = 175 °C
VGS = 10 V
ID = 20 A, TJ = 175 °C
VGS = 4.5 V
ID = 13 A
VGS = 4.5 V
ID = 18 A
VDS = 15 V, ID = 15 A
VDS = 15 V, ID = 20 A
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VDS = 20 V, f = 1 MHz
VDS = 20 V, f = 1 MHz
VDS = 20 V, f = 1 MHz
VDS = 20 V, f = 1 MHz
VDS = 20 V, f = 1 MHz
VDS = 20 V, f = 1 MHz
VDS = 20 V, ID = 6 A
VDS = 20 V, ID = 16 A
VDS = 20 V, ID = 6 A
VDS = 20 V, ID = 16 A
VDS = 20 V, ID = 6 A
VDS = 20 V, ID = 16 A
Gate Resistance
Rg
f = 1 MHz
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
MIN.
40
40
1.5
1.5
-
-
-
-
-
-
-
-
30
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
3
TYP. MAX. UNIT
-
-
-
-
V
2
2.5
2
2.5
- ± 100
nA
- ± 100
-
1
-
1
-
50
μA
-
50
-
150
-
150
-
-
A
-
-
0.0133 0.0160
0.0053 0.0064
- 0.0270
- 0.0105

- 0.0334
- 0.0130
0.0157 0.0188
0.0063 0.0076
64
-
S
102
-
717 896
1850 2313
118 148
pF
272 340
48
60
98
123
13.5 20
31.8 48
2.24
-
nC
5.5
-
2.06
-
4.7
-
2.52
5

7.93 13
S13-0567-Rev. A, 18-Mar-13
2
Document Number: 62767
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