SIA511DJ Datasheet, PDF (2/6 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

SPICE Device Model SiA511DJ
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
V_GS(th)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = −250 µA
V_GS = 4.5 V, I_D = 4.2 A
V_GS = −4.5 V, I_D = − 3.3 A
V_GS = 2.5 V, I_D = 3.8 A
V_GS = −2.5 V, I_D = − 2.8 A
V_GS = 1.8 V, I_D = 1.6 A
V_GS = −1.8 V, I_D = − 0.70 A
V_DS = 10 V, I_D = 4.2 A
V_DS = −10 V, I_D = −3.3 A
I_S = 4.4 A, V_GS = 0 V
I_S = −3.4 A, V_GS = 0 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
N-Channel
V_DS = 6 V, V_GS = 0 V, f = 1 MHz
C_oss
P-Channel
V_DS = −6 V, V_GS = 0 V, f = 1 MHz
C_rss
Total Gate Charge
V_DS = 6 V, V_GS = 8 V, I_D = 5.5 A
V_DS = −6 V, V_GS = −8 V, I_D = −4.3 A
Q_g
Gate-Source Charge
Gate-Source Charge
N-Channel
V_DS = 6 V, V_GS = 4.5 V, I_D = 5.5 A
Q_gs
P-Channel
V_DS = −6 V, V_GS = −4.5 V, I_D = −4.3 A
Q_gs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.55
0.84
0.034
0.058
0.041
0.085
0.051
0.121
14
15
0.95
0.70
0.033
0.058
0.039
Ω
0.082
0.051
0.111
13
S
9
0.80
V
−0.80
N-Ch
448
P-Ch
429
N-Ch
117
P-Ch
142
N-Ch
57
P-Ch
101
N-Ch
6.5
P-Ch
5.6
N-Ch
3.9
P-Ch
3.5
N-Ch
0.60
P-Ch
0.80
N-Ch
0.80
P-Ch
1.4
400
400
120
pF
140
70
100
7.5
8
4.5
5
nC
0.60
0.80
0.80
1.4
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Document Number: 69663
S-72405Rev. A, 19-Nov-07