SI9435BDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si9435BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = −30 V, V_GS = 0 V
V_DS = −30 V, V_GS = 0 V, T_J = 70_C
V_DS v −10 V, V_GS = −10 V
V_DS v −5 V, V_GS = −4.5 V
V_GS = −10 V, I_D = −5.7 A
V_GS = −6 V, I_D = −5 A
V_GS = −4.5 V, I_D = −4.4 A
V_DS = −15 V, I_D = −5.7 A
I_S = −2.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
V_DS = −15 V, V_GS = −10 V, I_D = −3.5 A
V_DD = −15 V, R_L = 15 W
I_D ^ −1 A, V_GEN = −10 V, R_G = 6 W
I_F = −1.2 A, di/dt = 100 A/ms
Min Typ^a Max Unit
−1.0
−3.0
V
"100
nA
−1
mA
−5
−20
A
−5
0.033
0.042
0.043
0.055
W
0.056
0.070
13
S
−0.8
−1.1
V
16
24
2.3
nC
4.5
8.8
W
14
25
14
25
42
70
ns
30
50
30
60
www.vishay.com
2
Document Number: 72245
S-32274—Rev. B, 03-Nov-03