SI9435BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
P-Channel 30-V (D-S) MOSFET
Si9435BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.042 @ V_GS = −10 V
−30
0.055 @ V_GS = −6 V
0.070 @ V_GS = −4.5 V
I_D (A)
−5.7
−5.0
−4.4
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si9435BDY
Si9435BDY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
−30
V_GS
"20
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
−5.7
−4.1
−4.6
−3.2
−30
−2.3
−1.1
2.5
1.3
1.6
0.8
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
40
70
24
Maximum
50
95
30
Unit
V
A
W
_C
Unit
_C/W
Document Number: 72245
S-32274—Rev. B, 03-Nov-03
www.vishay.com
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