SI9407BDY Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SPICE Device Model Si9407BDY
Vishay Siliconix
SPECIFICATIONS (T = 25 °C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistance^a
V
GS(th)
R_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage
V
SD
Dynamic^b
Input Capacitance
C
iss
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = - 250 μA
V = - 10 V, I = - 3.2 A
GS
D
V_GS = - 4.5 V, I_D = - 2.9 A
V_DS = - 10 V, I_D = - 3.2 A
I =-2A
F
V = - 30 V, V = 0 V, f = 1 MHz
DS
GS
V = - 30 V, V = - 10 V, I = - 3.2 A
DS
GS
D
V = - 30 V, V = - 4.5 V, I = - 3.2 A
DS
GS
D
Simulated Measured
Data
Data
2.1
0.092
0.119
7.1
- 0.76
0.100
0.126
8.5
- 0.80
608
600
71
70
39
50
12
14.5
6.4
8
2.2
2.2
3.7
3.7
Unit
V
Ω
S
V
pF
nC
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2
Document Number: 64135
S-82080-Rev. A, 08-Sep-08