SI9407BDY Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SPICE Device Model Si9407BDY
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the P-channel vertical DMOS. The subcircuit
model is extracted and optimized over the - 55 °C to 125 °C
temperature ranges under the pulsed 0 V to 10 V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C_gd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 64135
S-82080-Rev. A, 08-Sep-08
www.vishay.com
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