SI6875DQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET, Common Drain

Si6875DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = –16 V, V_GS = 0 V
V_DS = –16 V, V_GS = 0 V, T_J = 70_C
V_DS = –5 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –6.4 A
V_GS = –2.5 V, I_D = –5.5 A
V_GS = –1.8 V, I_D = –4.6 A
V_DS = –5 V, I_D = –6.4 A
I_S = –1.6 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –10 V, V_GS = –4.5 V, I_D = –6.4 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
I_F = –1.6 A, di/dt = 100 A/ms
Min Typ Max Unit
–0.45
V
"100
nA
–1
mA
–25
–20
A
0.022
0.027
W
0.029
0.036
0.042
0.052
W
19
S
–0.70
–1.1
V
26
36
4.6
nC
5.9
26
40
27
40
170
250
ns
75
110
30
50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 2.5 V
24
24
2V
18
18
12
1.5 V
6
0.5, 1 V
0
0
3
6
9
12
V_DS – Drain-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2-2
12
6
0
0
Transfer Characteristics
T_C = –55_C
25_C
125_C
0.5
1.0
1.5
2.0
2.5
V_GS – Gate-to-Source Voltage (V)
Document Number: 71230
S-01235—Rev. A, 12-Jun-00