SI6875DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET, Common Drain

New Product
Si6875DQ
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.027 @ V_GS = –4.5 V
–20
0.036 @ V_GS = –2.5 V
0.052 @ V_GS = –1.8 V
I_D (A)
–6.4
–5.5
–4.6
S₁
S₂
TSSOP-8
D₁ 1 _D
S_{1 2}
S_{1 3}
Si6875DQ
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
"8
–6.4
–5.2
–5.1
–4.1
–30
–1.6
–1.08
1.78
1.19
1.14
0.76
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71230
S-01235—Rev. A, 12-Jun-00
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
55
85
35
Maximum
70
105
45
Unit
_C/W
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