SI4860DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFE

Si4860DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
1.0
V_DS = 0 V, V_GS = "20 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 70_C
V_DS w 5 V, V_GS = 10 V
40
V_GS = 10 V, I_D = 16
V_GS = 4.5 V, I_D = 15
V_DS = 15 V, I_D = 16
I_S = 3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_G
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 4.5 V, I_D = 16 A
1.0
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 3 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ
0.0066
0.0090
60
0.70
13
5
4.0
1.7
18
12
46
19
40
Max Unit
V
"100
nA
1
mA
5
A
0.008
W
0.011
S
1.1
V
18
nC
2.9
W
27
18
70
ns
30
70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 10 thru 4 V
40
30
20
3V
10
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
50
40
30
20
T_C = 125_C
10
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Document Number: 71752
S-03662—Rev. C, 14-Apr-03