SI4860DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFE

New Product
Si4860DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.008 @ V_GS = 10 V
0.011 @ V_GS = 4.5 V
I_D (A)
16
15
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
D TrenchFETr Power MOSFETS
D PWM Optimized for High Efficiency
D 100% R_G Tested
APPLICATIONS
D Buck Converter
- High Side
- Low Side
D Synchronous Rectifier
- Secondary Rectifier
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
16
11
13
8
"50
3.0
1.40
3.5
1.6
2.2
1.0
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71752
S-03662—Rev. C, 14-Apr-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
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