SI4814DY Datasheet, PDF (2/2 Pages) Vishay Siliconix – Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode

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Specification Comparison
Vishay Siliconix
MOSFET SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4814BDY
Min
Typ
Max
Dynamic
Total Charge
Qg
Ch-1
Ch-2
6.6
10
8.9
14
Gate-Source Charge
Qgs
Ch-1
Ch-2
2.9
3.4
Gate-Drain Charge
Qgd
Ch-1
Ch-2
2.3
2.4
Gate Resistance
Rg
Ch-1
Ch-2
0.5
0.5
1.9
2.3
2.9
3.5
Switching
Ch-1
8
15
Turn-On Time
td(on)
Ch-2
Ch-1
9
15
11
18
tr
Ch-2
13
20
Turn-Off Time
td(off)
tf
Ch-1
Ch-2
Ch-1
Ch-2
21
32
27
40
6
10
9
15
Source-Drain Reverse Recovery Time
Ch-1
trr
Ch-2
28
40
24
35
Min
0.5
0.5
Si4814DY
Typ
Max
6.5
10
9.7
15
1.5
2.6
2.7
3.8
1.6
2.6
1.8
3.1
12
20
13
20
13
20
13
20
22
35
29
45
8
15
12
20
50
80
46
80
Unit
nC
Ω
ns
SCHOTTKY SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4814BDY
Min
Typ
Max
Min
Static
Forward Voltage Drop
VF
TJ = 25^oC
TJ = 125^oC
0.47
0.50
0.36
0.42
TJ = 25^oC
0.004
0.100
Maximum Reverse Leakage Current
Irm _{TJ = 100}^o_C
0.7
10
TJ = 125^oC
3.0
20
Junction Capacitance
CT
50
Si4814DY
Typ
Max
0.47
0.36
0.004
0.7
3.0
50
0.50
0.42
0.100
10
20
Unit
nC
mA
pF
Document Number 74072
11-May-05
886-3-5753170
86-755-83289224
Http://www.100y.com.tw
www.vishay.com