SI4814DY Datasheet, PDF (1/2 Pages) Vishay Siliconix – Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode

886-3-5753170
86-755-83289224
Http://www.100y.com.tw
Specification Comparison
Vishay Siliconix
Si4814BDY vs. Si4814DY
Description: Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode
Package:
SO-8
Pin Out:
Identical
Part Number Replacements:
Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3
Si4814BDY-T1-E3 Replaces Si4814DY-T1
Summary of Performance:
The Si4814BDY is the replacement to the original Si4814DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4814BDY Si4814DY
Ch-1 Ch-2 Ch-1 Ch-2
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
+20
30
+20
V
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
ID
IDM
7.5
7.8
7.0
7.8
6
6.3
5.6
6
40
40
40
40
A
Continuous Source Current
(MOSFET Diode Conduction)
IS
1.7
1.8
1.7
1.8
Power Dissipation
TA = 25°C
TA = 70°C
PD
1.9
2.0
1.9
2.0
1.2
1.3
1.2
1.3
W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient - MOSFET
RthJA
65
60
65
60
°C/W
MOSFET SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4814BDY
Min
Typ
Max
Static
Gate-Threshold Voltage
Ch-1
1.5
3.0
VGS(th)
Ch-2
1.5
2.7
Gate-Body Leakage
IGSS
Ch-1
Ch-2
+100
+100
Ch-1
1
Zero Gate Voltage Drain Current
IDSS
Ch-2
100
On-State Drain Current
Ch-1
20
VGS = 10 V
ID(on)
Ch-2
20
Drain-Source On-Resistance
VGS= 10 V
VGS= 4.5 V
rDS(on)
Ch-1
Ch-2
Ch-1
Ch-2
0.0145
0.015
0.019
0.018
0.018
0.018
0.023
0.022
Forward Transconductance
Ch-1
30
gfs
Ch-2
35
Diode Forward Voltage
Ch-1
VSD
Ch-2
0.75
1.1
0.47
0.5
Min
0.8
0.8
20
20
Si4814DY
Typ
Max
NS
NS
+100
+100
1
100
0.0175
0.0165
0.027
0.022
17
20
0.7
0.47
0.021
0.020
0.0325
0.0265
1.1
0.5
Unit
V
nA
µA
A
Ω
S
V
886-3-5753170
86-755-83289224
Http://www.100y.com.tw
Document Number 74072
11-May-05
www.vishay.com