SI4804BDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4804BDY
Vishay Siliconix
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
0.8
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85_C
V_DS = 5 V, V_GS = 10 V
20
V_GS = 10 V, I_D = 7.5 A
V_GS = 4.5 V, I_D = 6.5 A
V_DS = 15 V, I_D = 7.5 A
I_S = 1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 4.5 V, I_D = 7.5 A
0.5
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
Ch-1
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Typ^a
0.017
0.024
19
0.75
7
2.9
2.5
1.5
9
10
19
9
35
Max Unit
3.0
V
"100
nA
1
mA
15
A
0.022
W
0.030
S
1.2
V
11
nC
2.6
W
15
17
30
ns
15
55
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2
Document Number: 72061
S-32621—Rev. D, 29-Dec-03