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SI4804BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET | |||
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Si4804BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
ID (A)
7.5
6.5
FEATURES
D Trench FETr Power MOSFET
D PWM Optimized
D 100% Rg Tested
APPLICATIONS
D Symmetrical Buck-Boost DC/DC Converter
D1
SO-8
S1 1
8 D1
G1 2
7 D1
G1
S2 3
6 D2
G2 4
5 D2
Top View
Ordering Information: Si4804BDYâE3 (Lead Free)
Si4804BDY-T1âE3 (Lead Free with Tape and Reel)
S1
N-Channel MOSFET
D2
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
7.5
5.7
6.0
4.6
30
1.7
0.9
2.0
1.1
1.3
0.7
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Document Number: 72061
S-32621âRev. D, 29-Dec-03
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
Limits
Typ
Max
52
62.5
93
110
35
40
Unit
_C/W
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