SI4724CY_05 Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs

SPICE Device Model Si4724CY
Vishay Siliconix
IS SPICE 4 NETLIST
*=================================================
* Vishay SI4724CY
*
* This model was developed for Vishay by:
* AEI Systems, LLC
* 5777 W. Century Blvd. Suite 876
* Los Angeles, California 90045
* Copyright 2003, all rights reserved.
*
* This model is subject to change without notice.
* Users may not directly or indirectly re-sell or
* re-distribute this model.
*
* For more information regarding modeling services,
* model libraries and simulation products, please
* call AEi Systems at [phone], or contact
* AEi by email: [e-mail]. http://www.AENG.com
*
* Revision: 6/3/02, version 1.1
* Revision: 1/28/04, version 1.1
* Updated driver voltages and VTO to reduce IC current draw.
* Note, do not trust spice to have accurate currents.
**********
*SRC=Si4724CY;Si4724CY;Drivers;Power Mosfet;Synchronous
*SYM=Si4724CY
.SUBCKT Si4724CY VDD Vin Sync Gnd Boot D1 S1 D2 S2
*
VDD Vin Sync Gnd Boot D1 S1 D2 S2
* #alias bbm v(bbm)
* #alias g1 v(g1)
* #alias in v(vin)
* #alias syncin v(18)
* #alias in2 v(in2)
* #alias in3 v(in3)
* #alias vout v(5)
* #alias vswitch v(s1)
* #alias vboot v(boot)
* #alias vdduvlo v(vdduvlo)
* #alias g2 v(g2)
V10 Vdd 0 DC=5
B1 15 gnd V=V(Sync) > 2.3 ? 5 : 0
Q1 Boot Boot Vdd SIDRVABSD
.MODEL SIDRVABSD PNP BF=1.2465499 BR=0.0743382
+ CJC=2.48725E-10 CJE=1.45909E-10 EG=1.32 FC=0.5
+ IKF=10.6793593 IKR=100 IRB=9.494516E-6 IS=5.828556E-18
+ ISC=5.929013E-14 ISE=3.690477E-15 MJC=0.3677641
+ MJE=0.3267463 NC=1.47 NE=1.0479867 NF=0.9018194
+ NR=1.0087761 RB=130.4148594 RBM=0.0957343 RC=80
+ RE=1.0245273 TR=7.68E-7 VAF=1E4 VAR=2E4 VJC=0.6097614
+ VJE=0.803 XTB=3.4 XTI=0.5
B5 8 G1 V=V(VDDUvlo) > 1 ? V(16) > 4 ? 5 : 0
R8 11 8 35
C3 G1 11 30p
X3 D2 G2 S2 SIFETADY { }
R2 14 16 200
C1 16 gnd 100p
B2 In2 gnd V=V(16) > 4 ? 5 : 0
R10 15 18 170
C5 18 gnd 200p
B3 In3 gnd V=V(16) > 2.2 ? 5 : 0
BIN 14 gnd V=V(Vin) > 2.3 ? 5 : 0
S2 25 VDDUvlo Vdd 0 _S2_mod
.MODEL _S2_mod SW VT=3.8 VH=.2 ROFF=10meg
V7 25 0 DC=10
R5 VDDUvlo gnd 1
B7 BBM gnd V=V(S1) > 2.4 ? 5 : 0
D3 S2 D2 SISCHC2
.MODEL SISCHC2 D BV=30.2 CJO=200p EG=0.9 FC=0.50 IS=1.5u
+ N=1 RS=0 VJ=0.6 XTI=0.50
B4 27 G2 V=V(VDDUvlo) > 1 ? V(16) < 2.2 ? V(18) > 1 ? V(BBM) < 1 ? 5 : 0
R6 12 27 10
C2 12 G2 20p
X4 D1 G1 S1 SIFETADY { }
M9 S1 11 G1 G1 SIDRVAFETPh
.MODEL SIDRVAFETPh PMOS Level=1 CBD=530p CBS=636p
+ CGBO=1.07u CGDO=650n CGSO=780n GAMMA=0 IS=1.00p KP=75.0m
+ LAMBDA=2.50m MJ=0.460 PB=0.800 PHI=.75 RD=0.210 RS=0.210
+ VTO=2
M10 Gnd 12 G2 G2 SIDRVAFETPL
.MODEL SIDRVAFETPL PMOS Level=1 CBD=530p CBS=636p
+ CGBO=1.07u CGDO=650n CGSO=780n GAMMA=0 IS=1.00p KP=75.0m
+ LAMBDA=2.50m MJ=0.460 PB=0.800 PHI=.75 RD=0.140 RS=0.140
+ VTO=2
M11 Boot 11 G1 G1 SIDRVAFETNh
.MODEL SIDRVAFETNh NMOS Level=1 CBD=530p CBS=636p
+ CGBO=1.07u CGDO=650n CGSO=780n GAMMA=0 IS=1.00p KP=75.0m
+ LAMBDA=2.50m MJ=0.460 PB=0.800 PHI=.75 RD=98.0m RS=98.0m
+ VTO=2
M12 Vdd 12 G2 G2 SIDRVAFETNL
.MODEL SIDRVAFETNL NMOS Level=1 CBD=530p CBS=636p
+ CGBO=1.07u CGDO=650n CGSO=780n GAMMA=0 IS=1.00p KP=75.0m
+ LAMBDA=2.50m MJ=0.460 PB=0.800 PHI=.75 RD=84.0m RS=84.0m
+ VTO=2
.SUBCKT SIFETADY 4 1 2
M1 3 1 2 2 NMOS W=1358279u L=0.50u
M2 2 1 2 4 PMOS W=1358279u L=0.40u
R1 4 3 11E-3 RTEMP
CGS 1 2 450E-12
DBD 2 4 DBD
.MODEL NMOS NMOS (LEVEL = 3 TOX = 5E-8
+ RS = 4.3E-3
RD = 0 NSUB = 1.77E17
+ KP = 2.1E-5
UO = 650
+ VMAX = 0
XJ = 5E-7 KAPPA = 7E-2
+ ETA = 1E-4
TPG = 1
+ IS = 0
LD = 0
+ CGSO = 0
CGDO = 0 CGBO = 0
+ NFS = 0.8E12
DELTA = 0.1)
.MODEL PMOS PMOS (LEVEL = 3 TOX = 5E-8
+NSUB = 2.1E16
TPG = -1)
.MODEL DBD D (CJO=210E-12 VJ=0.38 M=0.22
+RS=0.01 FC=0.1 IS=1E-12 TT=2.8E-8 N=1 BV=30.2)
.MODEL RTEMP R (TC1=6.5E-3 TC2=5.5E-6)
.ENDS
.ENDS
******
Table 1: IsSpice4 Subcircuit Netlist
www.vishay.com
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Document Number: 72365
S-50464Rev. B, 14-Mar-05