SI3851DV_08 Datasheet, PDF (2/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET With Schottky Diode

Si3851DV
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
R_thJA
R_thJF
Typical
93
103
130
140
75
80
Maximum
110
125
150
165
90
95
Unit
_C/W
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –24 V, V_GS = 0 V
V_DS = –24 V, V_GS = 0 V, T_J = 75_C
V_DS w –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –1.8 A
V_GS = –4.5 V, I_D = –1.2 A
V_DS = –15 V, I_D = –1.8 A
I_S = –1.05 A, V_GS = 0 V
–1.0
–5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = –15 V, V_GS = –5 V, I_D = –1.8 A
V_DD = –15 V, R_L = 15 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –1.05 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ
0.165
0.298
2.4
–0.83
2.4
0.9
0.8
8
12
12
7
30
Max Unit
V
"100
nA
–1
mA
–10
A
0.200
W
0.360
S
–1.10
V
3.6
nC
12
18
18
ns
11
60
SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 0.5 A
I_F = 0.5 A, T_J = 125_C
V_r = 30 V
V_r = 30 V, T_J = 75_C
V_r = 30 V, T_J = 125_C
V_r = 10 V
www.vishay.com S FaxBack 408-970-5600
2-2
Typ
0.45
0.35
0.002
0.06
1.5
24
Max
0.5
0.4
0.100
1
10
Unit
V
mA
pF
Document Number: 70978
S-61845—Rev. A, 11-Oct-99