SI3851DV_08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET With Schottky Diode

New Product
Si3851DV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
–30
r_DS(on) (W)
0.200 @ V_GS = –10 V
0.360 @ V_GS = –4.5 V
I_D (A)
"1.8
"1.2
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
30
V_f (v)
Diode Forward Voltage
0.5 V @ 0.5 A
I_F (A)
0.5
TSOP-6
Top View
A
1
6
K
3 mm S
2
5
N/C
G
3
4
D
2.85 mm
S
K
G
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
V_DS
–30
V_KA
30
V_GS
"20
"20
Continuous Drain Current (T_J = 150_C) (MOSFET)^a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)^a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^a
Maximum Power Dissipation (Schottky)^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
"1.8
"1.5
–1.05
1.15
0.73
1.0
0.64
"7
0.5
7
–55 to 150
"1.6
"1.2
–0.75
0.83
0.53
0.76
0.48
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Unit
V
A
W
_C
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-1