SI1022R Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si1022R
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
V_(BR)DSS
V_GS(th)
I_GSS
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
Drain-Source On-Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
C_iss
C_oss
C_rss
Q_g
Switching^{b, c}
Turn-On Time
t_(on)
Turn-Off Time
t_(off)
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Test Conditions
V_GS = 0 V, I_D = 10 mA
V_DS = V_GS, I_D = 0.25 mA
V_DS = 0 V, V_GS = "10 V
T_J = 85_C
V_DS = 0 V, V_GS = "5 V
V_DS = 50 V, V_GS = 0 V
T_J = 85_C
V_DS = 60 V, V_GS = 0 V
V_DS = 10 V, V_GS = 4.5 V
V_DS = 7.5 V, V_GS = 10 V
V_GS = 4.5 V, I_D = 200 mA
T_J = 125_C
V_GS = 10 V, I_D = 500 mA
T_J = 125_C
V_DS = 10 V, I_D = 200 mA
V_GS = 0 V, I_S = 200 mA
V_DS = 25 V, V_GS = 0 V
f = 1 MHz
V_DS =10 V, I_D = 250 mA
V_GS = 4.5 V
V_DD = 30 V, R_L = 150 W
I_D = 200 mA, V_GEN = 10 V
R_G = 10 W
Min
60
1
500
800
100
Limits
Typ
Max
2.5
"150
"500
"20
10
100
1
3.0
5.0
1.25
2.25
1.30
30
6
2.5
0.6
25
35
Unit
V
nA
mA
mA
W
mS
V
pF
nC
ns
TNJO60
www.vishay.com
2
Document Number: 71331
S-03049—Rev. A, 05-Feb-01