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SI1022R Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET
New Product
N-Channel 60-V (D-S) MOSFET
Si1022R
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS(min) (V) rDS(on) (W)
60
1.25 @ VGS = 10 V
VGS(th) (V)
1 to 2.5
ID (mA)
330
FEATURES
D Low On-Resistance: 1.25 W
D Low Threshold: 2.5 V
D Low Input Capacitance: 30 pF
D Fast Switching Speed: 25 ns
D Low Input and Output Leakage
D Miniature Package
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Small Board Area
SC-75A
(SOT-416)
G1
3D
S2
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Marking Code: E
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currenta
Power Dissipationa
Thermal Resistance, Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
60
"20
330
240
650
250
130
500
–55 to 150
Notes
c. Surface Mounted on FR4 Board, Power Applied for tv10 sec.
Document Number: 71331
S-03049—Rev. A, 05-Feb-01
Unit
V
mA
mW
_C/W
_C
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