SD103AWS-V Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diodes

SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol Min
Typ.
Max
Unit
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
V_R = 30 V
SD103AWS-V
I_R
V_R = 20 V
SD103BWS-V
I_R
V_R = 10 V
SD103CWS-V
I_R
I_F = 20 mA
V_F
I_F = 200 mA
V_F
V_R = 0 V, f = 1 MHz
C_D
I_F = I_R = 50 mA to 200 mA,
t_rr
recover to 0.1 I_R
5
µA
5
µA
5
µA
370
mV
600
mV
50
pF
10
ns
Typical Characteristics
T_amb = 25 °C unless otherwise specified
1000
100
10
1
0.1
0.01
0
0.2
0.4 0.6
0.8 1.0
18488
V_F - Forward Voltage (V)
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
1000
100
10
1
0.1
T_amb = 125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0 5 10 15 20 25 30 35 40 45 50
20084
V_R - Reverse Voltage (V)
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
5
4
t_p = 300 ms
duty cycle = 2 %
3
2
1
0
0
0.5
1.0
1.5
18489
V_F - Forward Voltage (V)
Figure 2. Typical High Current Forward Conduction Curve
100
10
1
0
18491
10
20
30
40 50
V_R - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
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2
Document Number 85682
Rev. 1.7, 18-Sep-06