SD103AWS-V Datasheet, PDF (1/5 Pages) Vishay Siliconix – Small Signal Schottky Diodes

SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring
e3
• This diode is also available in the
Mini-MELF case with the type designations LL103A
to LL103C, DO35 case with the type designations
SD103A to SD103C and SOD123 case with type
designations SD103AW-V to SD103CW-V
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing, and coupling diodes for fast switching
and low logic level applications
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
SD103AWS-V
SD103BWS-V
SD103CWS-V
Ordering code
SD103AWS-V-GS18 or SD103AWS-V-GS08
SD103BWS-V-GS18 or SD103BWS-V-GS08
SD103CWS-V-GS18 or SD103CWS-V-GS08
Type Marking
S6
S7
S8
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
Peak reverse voltage
SD103AWS-V
V_RRM
40
V
SD103BWS-V
V_RRM
30
V
SD103CWS-V
V_RRM
20
V
Power dissipation
P_tot
200¹⁾
mW
Single cycle surge
10 µs square wave
I_FSM
2
A
1) _{Valid provided that electrodes are kept at ambient temperature}
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
R_thJA
T_j
T_stg
500¹⁾
125¹⁾
- 55 to + 150¹⁾
K/W
°C
°C
1) _{Valid provided that electrodes are kept at ambient temperature}
Document Number 85682
Rev. 1.7, 18-Sep-06
www.vishay.com
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