S330D Datasheet, PDF (2/4 Pages) Vishay Siliconix – Standard Avalanche Sinterglass Diode

S330D
Vishay Semiconductors
VISHAY
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
I_F = 1 A
I_F = 10 A
Reverse current
V_R = V_RRM
V_R = V_RRM, T_j = 100 °C
Reverse breakdown voltage
I_R = 100 µA
Reverse recovery time
I_F = 0.5 A, I_R = 1 A, i_R = 0.25 A
Symbol
V_F
V_F
I_R
I_R
V_(BR)R
t_rr
Min
Typ.
Max
Unit
1
V
1.65
V
5
µA
50
µA
1300
V
4
µs
Typical Characteristics (T_amb = 25 °C unless otherwise specified)
120
10000
100
1000
80
60
l
l
40
20
0
0
94 9090
T_L=constant
5 10 15 20 25 30
l – Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
100
10
1
25
50
17213
75
100 125 150 175
T_J (°C)
Figure 3. Reverse Current vs. Junction Temperature
3.0
2.5
2.0
R_thJA=45K/W
l=10mm
1.5
1.0
0.5
0.0
0
17212
20 40 60 80 100 120 140 160 180
T_amb – Ambient Temperature(°C )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
40
35
30
25
20
15
10
5
0
0.1
17214
1
10
100
V_R (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
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2
Document Number 86053
Rev. 1.5, 11-Aug-04