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S330D Datasheet, PDF (1/4 Pages) Vishay Siliconix – Standard Avalanche Sinterglass Diode
VISHAY
Standard Avalanche Sinterglass Diode
S330D
Vishay Semiconductors
Features
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• Hermetically sealed package
Applications
High voltage
Power supplies
949539
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Part
S330D
Type differentiation
VR = 1000 V; IFAV = 2 A
SOD-57
Package
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
Peak forward surge current
tp = 10 ms, half-sinewave
Average forward current
Tamb = 50 °C, l = 10 mm
Max. pulse energy in avalanche I(BR)R = 1 A, inductive load
mode, non repetitive (inductive
load switch off)
Junction and storage
temperature range
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
Lead length l = 10 mm,
TL = constant
Symbol
VR = VRRM
IFSM
IFAV
ER
Tj = Tstg
Value
Unit
1000
V
50
A
2.0
A
20
mJ
- 55 to + 175
°C
Symbol
RthJA
Value
Unit
45
K/W
Document Number 86053
Rev. 1.5, 11-Aug-04
www.vishay.com
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