RG4A_04 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Fast Sinterglass Diode

RG4A to RG4J
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
T_amb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance ¹⁾
Symbol
Value
Unit
R_θJA
22
K/W
1) _{Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, with both leads attached to heat sink}
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum instantaneous forward I_F = 3.0 A
voltage
Maximum reverse current
V_R = V_RRM
Maximum reverse recovery time I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
Typical junction capacitance
V_R = 4.0 V, f = 1 MHz
Part
RG4A
RG4B
RG4D
RG4G
RG4J
Symbol
V_F
I_R
t_rr
t_rr
t_rr
t_rr
t_rr
C_J
Typical Characteristics (T_amb = 25 °C unless otherwise specified)
Typ.
Max
Unit
1.3
V
5.0
µA
150
ns
150
ns
150
ns
150
ns
250
ns
50
pF
4.0
Resistive or Inductive Load
3.0
200
TA = 55°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
2.0
1.0
0.375" (9.5mm) Lead Length
0
0 25 50 75 100 125 150 175
grg4a_01
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
10
1
10
100
grg4a_02
Number of Cycles at 60 HZ
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 86076
Rev. 2, 28-Jan-03