RG4A_04 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Fast Sinterglass Diode

VISHAY
Fast Sinterglass Diode
RG4A to RG4J
Vishay Semiconductors
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Features
• High temperature metallurgically bonded con-
struction
• Cavity-free glass passivated junction
• Fast switching for high efficiency
• 3.0 ampere operation at T_amb = 50 °C with no ther-
mal runaway
• Hermetically sealed package
Mechanical Data
17133
Case: Sintered glass case, G4
Terminals: Solder plated axial leads, solderable per Mounting Position: Any
MIL-STD-750, Method 2026
Weight: 1040 mg
Parts Table
Part
Type differentiation
Package
RG4A
V_RRM = 50 V
G4
RG4B
V_RRM = 100 V
G4
RG4D
V_RRM = 200 V
G4
RG4G
V_RRM = 400 V
G4
RG4J
V_RRM = 600 V
G4
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Maximum average forward rectified current
Peak forward surge current
Maximum average reverse current
Operating junction and storage temperature
range
0.375 " (9.5 mm) lead length at T_amb = 55 °C
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
at rated peak reverse voltage T_amb = 25 °C
at rated peak reverse voltage T_amb = 100 °C
Part
RG4A
RG4B
RG4D
RG4J
RG1J
Symbol Value Unit
V_R =
50
V
V_RRM
V_R =
100
V
V_RRM
V_R =
200
V
V_RRM
V_R =
400
V
V_RRM
V_R =
600
V
V_RRM
I_F(AV)
3.0
A
I_FSM
100
A
I_R(AV)
2.0
µA
I_R(AV)
100
µA
T_J, - 55 to + °C
T_STG
175
Document Number 86076
Rev. 2, 28-Jan-03
www.vishay.com
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