MBRF2090CT_10 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual Common-Cathode High-Voltage Schottky Rectifier

New Product
MBRF2090CT, MBRF20100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage per diode
Maximum reverse current per diode
at working peak reverse voltage
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
I_F = 10 A
I_F = 20 A
T_C = 25 °C
T_C = 125 °C
T_J = 25 °C
T_J = 100 °C
V_F ⁽¹⁾
I_R ⁽²⁾
VALUE
0.80
0.65
0.75
100
6.0
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_θJC
MBRF
3.5
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
MBRF20100CT-M3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
20
16
12
8
4
Resistive or Inductive Load
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
160
T_J = T_J Max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
40
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetititve Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 89319
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Revision: 21-Sep-10