MBRF2090CT_10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common-Cathode High-Voltage Schottky Rectifier

New Product
MBRF2090CT, MBRF20100CT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
TMBS ^®
ITO-220AB
123
MBRF2090CT
MBRF20100CT
PIN 1
PIN 2
PIN 3
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 10 A
V_RRM
90 V, 100 V
I_FSM
150 A
V_F at I_F = 10 A
0.65 V
T_J max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capabilty
• High frequency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T_C = 133 °C
total device
per diode
V_RRM
V_RWM
V_DC
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Voltage rating of change (rated V_R)
Operating junction and storage temperature range
Isolation voltage from termal to heatsink t = 1 min
dV/dt
T_J, T_STG
V_AC
MBRF2090CT
MBRF20100CT
90
100
90
100
90
100
20
10
150
10 000
- 65 to + 150
1500
UNIT
V
V
V
A
A
V/μs
°C
V
Document Number: 89319 For technical questions within your region, please contact one of the following:
Revision: 21-Sep-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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