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MBRF1090CT Datasheet, PDF (2/4 Pages) GOOD-ARK Electronics – Dual High-Voltage Schottky Barrier Rectifiers
MBRF1090CT & MBRF10100CT
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBRF1090CT MBRF10100CT
Typical thermal resistance per diode
RθJC
6.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
ITO-220AB
MBRF10100CT-E3/45
1.99
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
8
6
4
2
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
100
TJ = 150 °C
10
TJ = 175 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
120
TJ = TJ Max.
100
8.3 ms Single Half Sine-Wave
80
60
40
20
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88681
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 08-Nov-07