MBR40H35PT_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier

MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
MBR40H35PT
MBR40H45PT
TYP.
MAX.
I_F = 20 A T_J = 25 °C
Maximum instantaneous forward voltage
per diode ⁽¹⁾
I_F = 20 A T_J = 125 °C
I_F = 40 A T_J = 25 °C
V_F
I_F = 40 A T_J = 125 °C
Maximum reverse current at rated V_R
per diode ⁽²⁾
T_J = 25 °C
T_J = 125 °C
I_R
-
0.63
0.49
0.55
-
0.73
0.62
0.66
-
150
9.0
25
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MBR40H50PT
MBR40H60PT
TYP.
MAX.
-
0.69
0.56
0.60
-
0.83
0.68
0.72
-
150
6.0
25
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR40H35PT MBR40H45PT MBR40H50PT
Thermal resistance, junction to case per diode
R_JC
1.2
MBR40H60PT
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-247AD
MBR40H45PT-E3/45
6.13

RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
PACKAGE CODE
45
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
45
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
400
T_J = T_J Max.
8.3 ms Single Half Sine-Wave
(JEDEC Method)
300
200
100
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 13-Aug-13
2
Document Number: 88794
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