MBR40H35PT_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier

MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
Package
Diode variations
40 A
35 V, 45 V, 50 V, 60 V
400 A
0.55 V, 0.60 V
175 °C
TO-247AD
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT UNIT
Maximum repetitive peak reverse voltage
V_RRM
35
Maximum working peak reverse voltage
V_RWM
35
Maximum DC blocking voltage
V_DC
35
Maximum average forward rectified current (fig. 1)
I_F(AV)
Non-repetitive avalanche energy per diode 
at 25 °C, I_AS = 4 A, L = 10 mH
E_AS
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
I_FSM
45
50
45
50
45
50
40
80
400
60
V
60
V
60
V
A
mJ
A
Peak repetitive reverse surge current per diode ₍₁₎
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
I_RRM
E_RSM
V_C
2.0
1.0
A
30
25
mJ
25
kV
Voltage rate of change at (rated V_R)
Operating junction temperature range
Storage temperature range
dV/dt
T_J
T_STG
10 000
- 65 to + 175
- 65 to + 175
V/μs
°C
°C
Note
(1) _{2.0 μs pulse width, f = 1.0 kHz}
Revision: 13-Aug-13
1
Document Number: 88794
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