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IRFR9220 Datasheet, PDF (2/8 Pages) Intersil Corporation – 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
◁
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 2.2 Ab
VDS = - 50 V, ID = - 2.2 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 3.9 A, VDS = - 160 V,
see fig. 6 and 13b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = - 100 V, ID = - 3.9 A,
RG = 18 Ω, RD = 24 Ω, see fig. 10b
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN.
- 200
-
- 2.0
-
-
-
-
1.1
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
- 0.22
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
1.5
-
V
V/°C
V
nA
µA
Ω
S
340
-
110
-
pF
33
-
-
20
-
3.3
nC
-
11
8.8
-
27
-
ns
7.3
-
19
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 3.6
A
-
-
- 14
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 3.6 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 3.9 A, dI/dt = 100 A/µsb
150
300
ns
Qrr
-
0.97 2.0
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91283
S-81411-Rev. A, 07-Jul-08
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