IRFR9220 Datasheet, PDF (1/8 Pages) Intersil Corporation – 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 200
V_GS = - 10 V
1.5
20
3.3
11
Single
S
DPAK
IPAK
(TO-252)
(TO-251)
G
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220/SiHFR9220)
• Straight Lead (IRFUFU9220/SiHFU9220)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9220PbF
SiHFR9220-E3
SnPb
IRFR9220
SiHFR9220
Note
a. See device orientation.
DPAK (TO-252)
IIRFR9220TRLPbF^a
SiHFR9220TL-E3^a
IRFR9220TRL^a
SiHFR9220TL^a
DPAK (TO-252)
IRFR9220TRRPbF^a
SiHFR9220TR-E3^a
IRFR9220TRR^a
SiHFR9220TR^a
DPAK (TO-252)
IRFR9220TRPbF^a
SiHFR9220T-E3^a
IRFR9220TR^a
SiHFR9220T^a
IPAK (TO-251)
IRFU9220PbF
SiHFU9220-E3
IRFU9220
SiHFU9220
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 50 V, Starting T_J = 25 °C, L = 35 mH, R_G = 25 Ω, I_AS = - 3.6 A (see fig. 12).
c. I_SD ≤ - 3.9 A, dI/dt ≤ 95 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 3.6
- 2.3
- 14
0.33
0.020
310
- 3.6
4.2
42
2.5
- 5.0
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91283
S-81411-Rev. A, 07-Jul-08
www.vishay.com
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