IRFR310 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)

IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)^a
R_thJA
Maximum Junction-to-Ambient
R_thJA
Maximum Junction-to-Case
R_thJC
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
TYP.
-
-
-
MAX.
50
110
5.0
UNIT
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 µA
V_GS = ± 20 V
V_DS = 400 V, V_GS = 0 V
V_DS = 320 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 1.0 A^b
V_DS = 50 V, I_D = 1.0 A^b
400
-
-
V
-
0.47
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
3.6
Ω
0.97
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
-
V_GS = 0 V,
V_DS = 25 V,
-
f = 1.0 MHz, see fig. 5^c
-
-
V_GS = 10 V
I_D = 2.0 A, V_DS = 320 V,
see fig. 6 and 13^{b, c}
-
-
-
V_DD = 200 V, I_D = 2.0 A,
-
R_G = 24 Ω, R_D = 95 Ω,
see fig. 10^{b, c}
-
-
170
-
34
-
pF
6.3
-
-
12
-
1.9
nC
-
6.5
7.9
-
9.9
-
ns
21
-
11
-
Internal Drain Inductance
Internal Source Inductance
L_D
Between lead,
D
6 mm (0.25") from
package and center of
G
L_S
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
Pulsed Diode Forward Current^a
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
1.7
A
-
-
6.0
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = 1.7 A, V_GS = 0 V^b
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_rr
-
240
540
ns
T_J = 25 °C, I_F = 2.0 A, dI/dt = 100 A/µs^b
Q_rr
-
0.85 1.6
µC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91272
S-81367-Rev. A, 21-Jul-08