IRFR310 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)

IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
400
V_GS = 10 V
3.6
12
1.9
6.5
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR310/SiHFR310)
• Straight Lead (IRFU310/SiHFU310)
• Available in Tape and Reel
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
DPAK (TO-252)
IRFR310PbF
SiHFR310-E3
SnPb
IRFR310
SiHFR310
Note
a. See device orientation.
DPAK (TO-252)
IRFR310TRLPbF^a
SiHFR310TL-E3^a
IRFR310TRL^a
SiHFR310TL^a
DPAK (TO-252)
IRFR310TRPbF^a
SiHFR310T-E3^a
IRFR310TR^a
SiHFR310T^a
DPAK (TO-252)
IRFR310TRRPbF^a
SiHFR310TR-E3^a
-
-
IPAK (TO-251)
IRFU310PbF
SiHFU310-E3
IRFU310
SiHFU310
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 52 mH, R_G = 25 Ω, I_AS = 1.7 A (see fig. 12).
c. I_SD ≤ 1.7 A, dI/dt ≤ 40 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
400
± 20
1.7
1.1
6.0
0.20
0.020
86
1.7
2.5
25
2.5
4.0
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91272
S-81367-Rev. A, 21-Jul-08
www.vishay.com
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