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IRFR-120 Datasheet, PDF (2/11 Pages) Vishay Siliconix – Power MOSFET
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www.vishay.com
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.6 Ab
VDS = 50 V, ID = 4.6 A
100
-
-
V
-
0.13
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.27

1.6
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
360
-
-
150
-
pF
-
34
-
-
VGS = 10 V
ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13b
-
-
-
16
-
4.4
nC
-
7.7
-
6.8
-
VDD = 50 V, ID = 9.2 A,
Rg = 18 , RD = 5.2 , see fig. 10b
-
27
-
ns
-
18
-
-
17
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
7.7
A
-
-
31
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb
-
-
2.5
V
trr
-
130
260
ns
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb
Qrr
-
0.65 1.3
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S13-0171-Rev. C, 04-Feb-13
2
Document Number: 91266
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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