IRFR-120 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Power MOSFET

www.vishay.com
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
100
V_GS = 10 V
0.27
Q_g (Max.) (nC)
16
Q_gs (nC)
4.4
Q_gd (nC)
7.7
Configuration
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
D
D
G
S
G
GD ^S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR120, SiHFR120)
• Straight Lead (IRFU120, SiHFU120)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR120-GE3
IRFR120PbF
SiHFR120-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR120TR-GE3^a
IRFR120TRPbF^a
SiHFR120T-E3^a
DPAK (TO-252)
SiHFR120TRR-GE3^a
IRFR120TRRPbF^a
SiHFR120TR-E3^a
DPAK (TO-252)
SiHFR120TRL-GE3^a
IRFR120TRLPbF^a
SiHFR120TL-E3^a
IPAK (TO-251)
SiHFU120-GE3
IRFU120PbF
SiHFU120-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dtc
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 5.3 mH, R_g = 25 , I_AS = 7.7 A (see fig. 12).
c. I_SD  9.2 A, dI/dt  110 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
100
± 20
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0171-Rev. C, 04-Feb-13
1
Document Number: 91266
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000