IRFB9N30A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A)

IRFB9N30A, SiHFB9N30A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R_thJA
R_thCS
R_thJC
TYP.
-
0.50
-
MAX.
62
-
1.3
UNIT
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 µA
V_GS = ± 30
V_DS = 300 V, V_GS = 0 V
V_DS = 240 V, V_GS = 0 V, T_J = 150 °C
V_GS = 10 V
I_D = 5.5 A^b
V_DS = 50 V, I_D = 5.6 A^b
300
-
-
V
-
0.38
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.45
Ω
6.6
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_{oss eff.}
C_oss
C_rss
V_GS = 0 V
V_DS = 1.0 V
V_DS = 240 V
V_DS = 0 V to 240 V^c
V_DS = 25 V
f = 1.0 MHz, see fig. 5
-
920
-
-
1200
-
-
52
-
pF
-
102
-
-
160
-
-
8.7
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
-
-
33
I_D = 9.3 A, V_DS = 240 V,
Q_gs
V_GS = 10 V
see fig. 6 and 13^b
-
-
6.9
nC
Q_gd
-
-
12
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DD = 150 V, I_D = 9.3 A
R_G = 12 Ω, R_D = 16 Ω, see fig. 10^b
-
10
-
-
25
-
ns
-
35
-
-
29
-
Internal Drain Inductance
Internal Source Inductance
L_D
Between lead,
6 mm (0.25") from
D
package and center of
G
L_S
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current^a
I_S
MOSFET symbol
showing the
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
9.3
A
-
-
37
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = 9.3 A, V_GS = 0 V^b
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_rr
Q_rr
-
T_J = 25 °C, I_F = 9.3 A, di/dt = 100 A/µs^b
-
280
420
ns
1.5
2.3
µC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C_oss eff. ia a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS
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Document Number: 91102
S-Pending-Rev. A, 03-Jun-08