IRFB9N30A Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A)

IRFB9N30A, SiHFB9N30A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
300
V_GS = 10 V
33
0.45
6.9
12
Single
D
TO-220
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third Generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at lower dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB9N30APbF
SiHFB9N30A-E3
IRFB9N30A
SiHFB9N30A
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 3.7 mH, R_G = 25 Ω, I_AS = 9.3 A (see fig. 12).
c. I_SD ≤ 9.3 A, dI/dt ≤ 270 A/μs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
± 30
9.3
5.9
37
0.77
160
9.3
9.6
96
4.6
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91102
S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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