ILD620GB-X009T Datasheet, PDF (2/9 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel)

www.vishay.com
ILD620, ILD620GB, ILQ620, ILQ620GB
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
I_F
I_FSM
P_diss
± 60
± 1.5
100
1.3
mA
A
mW
mW/°C
OUTPUT
Collector emitter breakdown voltage
Collector current
Power dissipation
Derate from 25 °C
t<1s
BV_CEO
I_C
I_C
P_diss
70
V
50
mA
100
mA
150
mW
2
mW/°C
COUPLER
Isolation test voltage
Isolation voltage
Total power dissipation
Package dissipation
t=1s
ILD620
ILD620GB
V_ISO
V_IORM
P_tot
5300
890
250
400
400
V_RMS
V_P
mW
mW
mW
Derate from 25 °C
5.33
mW/°C
Package dissipation
ILQ620
ILQ620GB
500
mW
500
mW
Derate from 25 °C
6.67
mW/°C
Creepage distance
7
mm
Clearance distance
7
mm
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature ⁽¹⁾
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
2 mm from case bottom
R_IO
 10¹²

R_IO
 10¹¹

T_stg
- 55 to + 150
°C
T_amb
- 55 to + 100
°C
T_j
100
°C
T_sld
260
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) _{Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through}
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
INPUT
Forward voltage
Forward current
Capacitance
Thermal resistance, junction to lead
OUTPUT
I_F = ± 10 mA
V_R = ± 0.7 V
V_F = 0 V, f = 1 MHz
V_F
I_F
C_O
R_thJL
Collector emitter capacitance
Collector emitter leakage current
Thermal resistance, junction to lead
V_CE = 5 V, f = 1 MHz
V_CE = 24 V
T_A = 85 °C, V_CE = 24 V
C_CE
I_CEO
I_CEO
R_thJL
MIN.
1
TYP.
1.15
2.5
25
750
6.8
10
2
500
MAX. UNIT
1.3
V
20
μA
pF
K/W
pF
100
nA
50
μA
K/W
Rev. 1.8, 12-Apr-13
2
Document Number: 83653
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000