H11A1 Datasheet, PDF (2/8 Pages) Motorola, Inc – 6-Pin DIP Optoisolators Transistor Output

End of Life January-2018 - Alternative Device: CNY17
www.vishay.com
H11A1, H11A2, H11A3, H11A4, H11A5
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
INPUT
Reverse voltage
V_R
Forward current
Surge current
I_F
t ≤ 10 μs
I_FSM
Power dissipation
P_diss
OUTPUT
Collector emitter breakdown voltage
V_CEO
Emitter base breakdown voltage
V_EBO
Collector current
I_C
t < 1 ms
I_C
Power dissipation
P_diss
COUPLER
Storage temperature range
T_stg
Operating temperature range
T_amb
Junction temperature
T_j
Soldering temperature
Max. 10 s, dip soldering: distance
to seating plane ≥ 1.5 mm
T_sld
VALUE
6
60
2.5
100
70
7
50
100
150
-55 to +150
-55 to +100
100
260
UNIT
V
mA
A
mW
V
V
mA
mA
mW
°C
°C
°C
°C
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX. UNIT
INPUT
H11A1
V_F
1.1
1.5
V
H11A2
V_F
1.1
1.5
V
Forward voltage
I_F = 10 mA
H11A3
V_F
1.1
1.5
V
H11A4
V_F
1.1
1.5
V
H11A5
V_F
1.1
1.7
V
Reverse current
V_R = 3 V
I_R
10
μA
Capacitance
V_R = 0 V, f = 1 MHz
C_O
50
pF
OUTPUT
Collector emitter breakdown voltage
I_C = 1 mA, I_F = 0 mA
BV_CEO
30
V
Emitter collector breakdown voltage
I_E = 100 μA, I_F = 0 mA
BV_ECO
7
V
Collector base breakdown voltage
I_C = 10 μA, I_F = 0 mA
BV_CBO
70
V
Collector emitter leakage current
V_CE = 10 V, I_F = 0 mA
I_CEO
5
50
nA
Emitter collector capacitance
V_CE = 0 V
C_CE
6
pF
COUPLER
Collector emitter, saturation voltage
I_CE = 0.5 mA, I_F = 10 mA
V_CEsat
0.4
V
Capacitance (input-output)
C_IO
0.5
pF
Note
• Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
I_C/I_F
TEST CONDITION
V_CE = 10 V, I_F = 10 mA
PART
H11A1
H11A2
H11A3
H11A4
H11A5
SYMBOL
CTR_DC
CTR_DC
CTR_DC
CTR_DC
CTR_DC
MIN.
50
20
20
10
30
TYP.
MAX.
UNIT
%
%
%
%
%
Rev. 1.7, 23-Jul-15
2
Document Number: 83730
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000