GSIB620_14 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Single-Phase Single In-Line Bridge Rectifiers

www.vishay.com
GSIB620, GSIB640, GSIB660, GSIB680
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GSIB620 GSIB640 GSIB660 GSIB680 UNIT
Typical thermal resistance
R_JA ⁽²⁾
22
R_JC ⁽¹⁾
3.4
Notes
(1) _{Unit case mounted on aluminum plate heatsink}
(2) _{Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length}
(3) _{Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw}
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
GSIB660-E3/45
7.0
45
BASE QUANTITY
20
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
10
Heatsink Mounting, T_C
8
6
4
P.C.B. Mounting, T_A
2
0
0
50
100
150
Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
100
T_J = 150 °C
10
1
0.1
T_J = 25 °C
T_J = 125 °C
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
210
T_J = T_J Max.
180
Single Sine-Wave
150
120
90
60
30
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
1000
100
10
T_J = 150 °C
T_J = 125 °C
1
0.1
T_J = 25 °C
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 13-Jun-14
2
Document Number: 88648
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000