GSIB620_14 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Single-Phase Single In-Line Bridge Rectifiers

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GSIB620, GSIB640, GSIB660, GSIB680
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
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Case Style GSIB-5S
PRIMARY CHARACTERISTICS
Package
GSIB-5S
I_F(AV)
6.0 A
V_RRM
200 V, 400 V, 600 V, 800 V
I_FSM
180 A
I_R
10 μA
V_F at I_F = 3.0 V
0.95 V
T_J max.
Diode variations
150 °C
In-Line
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 V_RMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
MECHANICAL DATA
Case: GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (T_A = 25 °C unless otherwise specified)
PARAMETER
SYMBOL GSIB620
GSIB640
GSIB660
Maximum repetitive peak reverse voltage
V_RRM
200
Maximum RMS voltage
V_RMS
140
Maximum DC blocking voltage
V_DC
200
Maximum average forward rectified
output current at
T_C = 100 °C ⁽¹⁾
T_A = 25 °C ⁽²⁾
I_F(AV)
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC method)
I_FSM
Rating for fusing (t < 8.3 ms)
I²t
400
600
280
420
400
600
6.0
2.8
180
120
Operating junction and storage temperature range
T_J, T_STG
-55 to +150
Notes
(1) _{Unit case mounted on aluminum plate heatsink}
(2) _{Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length}
GSIB680
800
560
800
UNIT
V
V
V
A
A
A²s
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL GSIB620
Maximum instantaneous forward
voltage drop per diode
3.0 A
V_F
Maximum DC reverse current at
T_A = 25 °C
rated DC blocking voltage per
diode
T_A = 125 °C
I_R
GSIB640 GSIB660
0.95
10
250
GSIB680
UNIT
V
μA
Revision: 13-Jun-14
1
Document Number: 88648
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000