G3SBA20_13 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier

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G3SBA20, G3SBA60, G3SBA80
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G3SBA20
G3SBA60
Typical thermal resistance
R_JA ⁽²⁾
26
R_JC ⁽¹⁾
5.0
Notes
(1) _{Unit case mounted on aluminum plate heatsink}
(2) _{Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length}
G3SBA80
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
G3SBA60-E3/45
3.404
45
G3SBA60-E3/51
3.404
51
BASE QUANTITY
20
250

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
Paper tray
4
100
Heatsink Mounting, T_C
3
10
2
1
P.C.B. Mounting, T_A
1
0.1
0
0
25
50
75
100
125
150
Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
100
80
60
40
20
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0.01
0.4
0.8
1.2
1.6
2.0
2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
T_A = 125 °C
10
1
0.1
T_A = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 27-Sep-13
2
Document Number: 88606
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