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G3SBA20_13 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier
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G3SBA20, G3SBA60, G3SBA80
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
+
~
~
-
Case Style GBU
-~~+
Case Style GBU
PRIMARY CHARACTERISTICS
Package
GBU
IF(AV)
4.0 A
VRRM
200 V, 600 V, 800 V
IFSM
80 A
IR
5 μA
VF at IF = 2.0 V
1.0 V
TJ max.
Diode variations
150 °C
In-Line
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, switching mode power supply,
adapter, audio equipment, and home appliances
applications.
MECHANICAL DATA
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G3SBA20
G3SBA60
Maximum repetitive peak reverse voltage
VRRM
200
600
Maximum RMS voltage
VRWM
140
420
Maximum DC blocking voltage
VDC
200
600
Maximum average forward rectified
output current at
TC = 100 °C (1)
TA = 25 °C (2)
IF(AV)
4.0
2.3
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
80
Rating for fusing (t < 8.3 ms)
I2t
27
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
G3SBA80
800
560
800
UNIT
V
V
V
A
A
A2s
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
G3SBA20
G3SBA60
Maximum instantaneous forward
voltage per diode
2.0 A
VF
1.00
Maximum DC reverse current at
TJ = 25 °C
rated DC blocking voltage per diode TJ = 125 °C
IR
5.0
400
G3SBA80
UNIT
V
μA
Revision: 27-Sep-13
1
Document Number: 88606
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000