ESH1PA Datasheet, PDF (2/2 Pages) Vishay Siliconix – High Current Density Surface Mount Ultrafast Rectifiers

ESH1PA thru ESH1PD
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
1.2
1.0
0.8
0.6
0.4
TL measured
at the cathode band terminal
0.2
0
95
100
105 115 125 135 145 155 165 175
Lead Temperature (°C)
Fig. 3 – Typical Instantaneous
Forward Characteristics
10
TJ = 175°C
TJ = 150°C
1
0.1
TJ = 25°C
TJ = 125°C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 5 – Typical Junction Capacitance
1000
100
10
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
50
40
30
20
10
0
1
1000
10
100
Number of Cycles at 50 HZ
Fig. 4 – Typical Reverse Leakage
Characteristics
TJ = 175°C
100
TJ = 150°C
10
T_J = 125°C
1
0.1
TJ = 25°C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Transient Thermal
Impedance
1000
100
10
1
0.1
1
10
100
Reverse Voltage (V)
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2
1
0.01
0.1
1
10
100
t, Pulse Duration (sec.)
Document Number 88895
23-Sep-04