ESH1PA Datasheet, PDF (1/2 Pages) Vishay Siliconix – High Current Density Surface Mount Ultrafast Rectifiers

New Product
ESH1PA thru ESH1PD
Vishay Semiconductors
formerly General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
Cas Style SMP
Cathode band
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.013 (0.35)
0.004 (0.10)
0.012 (0.30)
0.000 (0.00)
Dimensions in inches
and (millimeters)
0.045 (1.15)
0.033 (0.85)
0.018 (0.45)
0.006 (0.15)
0.012 (0.30) REF
Reverse Voltage 50 to 200 V
Forward Current 1.0 A
Features
Reverse Recovery Time 25ns
• Very low profile - typical height of 1.0mm
• For surface mount application
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High operation temperature up to 175°C
• Built-in strain relief, ideal for automated placement
• High temperature soldering guaranteed:
260°C/10 seconds at terminals
• Meets MSL Level 1 per J-STD-020C
Mechanical Data
Case: SMP
Terminals: Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0009 oz., 0.024g
Epoxy meets UL 94V-0 flammability rating
Mounting Pad Layout
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.053 (1.35)
0.041 (1.05)
0.103 (2.60)
0.087 (2.20)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.100
(2.54)
0.050
(1.27)
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol ESH1PA ESH1PB ESH1PC
Device marking code
PA
PB
PC
Maximum reverse voltage
VRM
50
100
150
Maximum average forward rectified current Fig.1
IF(AV)
1.0
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
IFSM
50
Typical thermal resistance ⁽¹⁾
Operating junction and Storage temperature range
RθJA
RθJL
RθJC
TJ, TSTG
105
15
20
–55 to +175
ESH1PD
PD
200
Unit
V
A
A
°C/W
°C
Electrical Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Maximum instantaneous forward voltage⁽²⁾ at IF=0.7A, TJ=25°C
at IF=1A, TJ=25°C
VF
0.86
0.90
V
Maximum reverse current
at rated VRM⁽²⁾
TJ = 25°C
TJ =125°C
IR
1.0
25
µA
Maximum reverse current at VR = 20V, TJ =150°C
IR
50
µA
Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A trr
25
ns
Typical reverse recovery time at
TJ=25°C
at IF = 1.0A, VR = 30V di/dt = 50A/µs, Irr = 10% IRM TJ=100°C
trr
25
35
ns
Typical reverse recovery time at
TJ=25°C
at IF = 1.0A, VR = 30V di/dt = 50A/µs, Irr = 10% IRM TJ=100°C
Qrr
10
15
nC
Typical junction capacitance at 4.0V, 1MHz
CJ
25
pF
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the
terminal of cathode band. RθJC is measured at the top centre of the body
(2) Pulse test: 300µs pulse width, 1% duty cycle
Document Number 88895
23-Sep-04
www.vishay.com
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