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DG451 Datasheet, PDF (2/9 Pages) Vishay Siliconix – High Voltage 4-Ω Quad SPST CMOS Analog Switch
DG451/DG452/DG453
Vishay Siliconix
New Product
ORDERING INFORMATION
Temp Range
DG451/DG452/DG453
Package
- 40 °C to 125 °Ca
16-Pin TSSOP
16-Pin Narrow SOIC
Notes:
a. - 40 to 85 °C datasheet limits apply.
Part Number
DG451EQ-T1-E3
DG452EQ-T1-E3
DG453EQ-T1-E3
DG451EY-T1-E3
DG452EY-T1-E3
DG453EY-T1-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
Unit
V+ to V-
44
GND to V-
25
VL
(GND - 0.3) to (V+) + 0.3
V
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
100
mA
300
Storage Temperature
- 65 to 150
°C
Power Dissipation (Package)b
16-Pin TSSOPc
16-Pin Narrow SOICd
450
mW
600
Thermal Resistance (Package)b
16-Pin TSSOP
16-Pin Narrow SOIC
178
C/W
125
ESD (HBM)
2
kV
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 5.6 mW/°C above 70 °C.
d. Derate 8.0 mW/°C above 75 °C.
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Analog Switch
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Va
Temp.b
Analog Signal Rangee
On-Resistance
VANALOG
RON
IS = - 10 mA, VD = - 10 V to + 10 V
Full
Room
Full
On-Resistance Match
ΔRON
IS = - 10 mA, VD = ± 10 V
Room
Full
On-Resistance Flatness
RFLATNESS IS = - 10 mA, VD = - 5 V, 0 V, + 5 V
Room
Full
Switch Off
Leakage Current
IS(off)
ID(off)
VD = ± 10 V, VS = 10 V
Room
Full
Room
Full
Channel On
Leakage Current
ID(on)
VS = VD = ± 10 V
Room
Full
Typ.c
3.8
0.12
0.25
± 0.1
± 0.1
± 0.1
- 40 to 125 °C - 40 to 85 °C
Min.d Max.d Min.d Max.d Unit
- 15
15
- 15
15
V
5.3
8.3
5.3
7.3
Ω
0.5
0.5
1
0.5
0.5
0.5
0.5
0.5
- 0.5 0.5 - 0.5 0.5
- 20
20
- 2.5 2.5
- 0.5
- 20
0.5
20
- 0.5
- 2.5
0.5
2.5
nA
- 0.4 0.4
-1
1
- 40
40
-5
5
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Document Number: 74470
S-81306-Rev. D, 09-Jun-08