DG2717 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Low-Voltage, 0.45-Ω, SPDT Analog Switch

DG2717
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference V+ to GND
IN, COM, NC, NO^a
- 0.3 to + 5.0
V
- 0.3 to (V+ + 0.3)
Continuous Current (NO, NC and COM Pins)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 200
mA
± 300
Storage Temperature (D Suffix)
- 65 to 150
°C
Power Dissipation (Packages)^b
6-Pin SC89
172
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 2.15 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 1.8 V)
Parameter
Analog Switch
Analog Signal Range^d
On-Resistance
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance^d
Input Current^f
Dynamic Characteristics
Turn-On Time^d
Turn-Off Time^d
Break-Before-Make Time^d
Charge Injection^d
Off-Isolation^d
Crosstalk^d
NO, NC Off Capacitance^d
Channel-On Capacitance^d
Symbol
Test Condition
Otherwise Unless Specified
V+ = 1.8 V, ± 10 %, V_IN = 0.4 or 1.0 V^e
Temp^a
V_NO, V_NC,
V_COM
r_ON
V+ = 1.8 V, V_COM = 0.2 V, I_NO/NC = 100 mA
Full
Room
Full
V_INH
Full
V_INL
Full
C_in
Full
I_INL or I_INH
V_IN = 0 V or V+
Full
t_ON
t_OFF
t_d
Q_INJ
O_IRR
X_TALK
C_NO(off),
C_NC(off)
C_ON
V_NO or V_NC = 1.5 V, R_L = 50 Ω, C_L = 35 pF
Figures 1 and 2
C_L = 1 nF, V_GEN = 0 V, R_GEN = 0 Ω, Figure 3
R_L = 50 Ω, C_L = 5 pF, f = 1 MHz
Room
Full^d
Room
Full^d
Room
Room
Room
Room
V_IN = 0 or V+, f = 1 MHz
Room
Room
Limits
- 40 to 85 °C
Min^b
Typ^c
Max^b
0
V+
1.0
2.0
2.1
1.0
0.4
7
-1
1
54
74
81
14
34
35
8
26
- 54
- 60
80
180
Unit
V
Ω
V
pF
µA
ns
pC
dB
pF
www.vishay.com
2
Document Number: 73538
S-70852-Rev. B, 30-Apr-07